Background and Research Summary

Dr. Ravi Droopad joined Texas State University in 2008 as a professor after spending 13 years at Motorola Labs/Freescale semiconductors developing materials and structures for future device applications.

After a stint as a Research Scientist at Arizona State University, he joined Motorola Labs where he initially developed MBE growth processes for PHEMT and EMODE type semiconductor devices for power amplifiers. He has led a team to develop multifunctional oxides on semiconductors including oxides on silicon as a high k dielectric replacement for SiO₂ in Si CMOS devices and later GaAs using crystalline SrTiO₃ on Si as virtual substrates for implemanting other oxide devices on a silicon platform as a solution towards manufacturability. He has also been involved in the development of deposition GaAs based devices on Si using STO as a buffer layer. His work on high-k dielectric on III-V semiconductors has led to the successful demonstration of Fermi level unpinning on GaAs and the realization of high-performance manufacturable enhancement mode III-V MOSFET devices. More recently his efforts has led to the demonstration of an InAs surface channel MOSFET with ….

In 2002, he was elected to the Motorola’s Scientific Advisory Board Associates for his contributions to materials research and in 2006 he received the IEEE Phoenix section engineer of the year award. He was elevated to an IEEE fellow in 2016.

He currently has 45 issued patents and has published over 200 refereed papers in scientific journals.