Areas of Research

Materials/Structures for next generation CMOS devices

• High-k dielectrics for Si and III-V semiconductors
• Replacement of Si with new high mobility III-V as channel materials
• Heteroepitaxy of III-V semiconductors with Si

Multifunctional Oxides on Semiconductors

• Single crystal ferroelectric and ferromagnetic oxides integrated onto Si and III-V for additional functionality on semiconductor circuits

Wide Bandgap Oxides for high power electronics and UV applications

• Growth of Ga2O3 and ternary alloys by MBE and PLD
• Study of doping incorporation

Heterointegration of III-V, oxides and Si

• Combining optoelectronics, logic, memory, sensors, etc for new device applications.