Magnetic field sensor based on varistor response, R. K. Pandey, R. Droopad, H. Stern, IEEE Sensors Journal, 19 (2019) 8635
Characterization of VO2/ferroelectric thin film heterostructures deposited on various complex oxide single crystal substrates, A. Petraru, R. Droopad, H. Kohlstedt, J. Vac. Sci. Tech A37 (2019) 21514
Scaling and mechanism of droplet array formation on a laser-ablated superhydrophobic grid, Bahador Farshchian, Javad R. Gatabi, Steven M. Bernick, Gwan-Hyoung Lee, Ravindranath Droopad, Namwon Kim, Colloids and Surfaces A, 547 (2018) 49-55
Bias temperature stress induced hydrogen depassivation from Al2O3/InGaAs interface defects, Kechao Tang, Ravi Droopad, Paul C. McIntyre, J. Appl. Physics 123 (2018) 025708
Structural, Optical, and Electrical Characterization of beta-Ga2O3 Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy Suitable for UV Sensing, A. N. Nedev, S. Ghose, J. S. Rojas-Ramirez, D. Mateos, M. C. Alverez, O. Perez, M. Saurez, B. Valdez-Salas, R. Droopad, Adv. Mat. Sci & Eng (2018) 9450157
Efficiency of broadband terahertz rectennas based on self-switching nanodiodes, E. Briones, I. E. Cortes-Mestizo, J. Briones , R. Droopad, L. I. Espinosa-Vega, H. Vilchis, V. H. Mendez-Garcia, J. Photonics for Energy, 7 (2017) 25001
Optical spectroscopy analysis of the near surface depletion layer in AlGaAs/GaAs heterostructures grown by MBE, I. E. Cortes-Mestizo, E. Briones, C. M. Yee-Rendon, L. Zamora Peredo, L. I. Espinosa-Vega, R. Droopad, V. H. Mendez-Garcia, J. Cryst. Growth, 477 (2017) 59-64
Growth and characterization of Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors, Susmita Ghose, Shafiqur Rahman, Liang Hong, Juan Salvador Rojas-Ramirez, Hanbyul Jin, Kibog Park, Robert Klie, and Ravi Droopad, J. Appl. Phys. 122, (2017) 095302
Atomic-scale structural and electronic properties of SrTiO3/GaAs interfaces: A combined STEM-EELS and first-principles study, Liang Hong, Kunal Bhatnagar, Ravi Droopad, Robert F. Klie, and Serdar Ö̆güt, Phys. Rev. B 96 (2017) 035311
Tuning electrical properties of PZT film deposited by Pulsed Laser Deposition, J.R.Gatabi, S. Rahman, A. Amaro, T. Nash, J. Rojas-Ramirez, R. K. Pandey, R. Droopad, Ceramics Intl. 43 (2017) 6008
Self-limiting CVD of a passivating SiOx control layer on InGaAs(001)-(2×4) with the prevention of III-V oxidation, M. Edmonds, S. Wolf, E. Chagarov, T. Kent, J.H. Park, R. Holmes, D. Alvarez, R. Droopad, A.C.Kummel, Surf. Sci. 660 (2017) 31
Interface Defect Hydrogen Depassivation and Capacitance-Voltage Hysteresis of Al2O3/InGaAs Gate Stacks, K.C.Tang, F.R. Palumbo, L.L.Zhang, R. Droopad, P.C. McIntyre, ACS Appl. Mat. & Interfaces 9 (2017) 7819
A crystalline oxide passivation on In0.53Ga0.47As (100), Xiaoye Qin, Wei-E Wang, Ravi Droopad, Mark S. Rodder, and Robert M. Wallace, J. of Appl. Phys. 121, 125302 (2017)
Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks, Kechao Tang, Andrew C. Meng, Ravi Droopad, and Paul C. McIntyre, ACS Appl. Mater. Interfaces 2016, 8, 30601
Laser-induced superhydrophobic grid patterns on PDMS for droplet arrays formation, Bahador Farshchian, Javad R. Gatabi, Steven M. Bernicka, Sooyeon Park, Gwan-Hyoung Lee, Ravindranath Droopad, Namwon Kim, Applied Surface Science 396 (2017) 359
The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors, Yen-Chun Fu, Uthayasankaran Peralagu, David A. J. Millar, Jun Lin, Ian Povey, Xu Li, Scott Monaghan, Ravi Droopad, Paul K. Hurley, and Iain G. Thayne, Appl. Phys. Lett. 110, 142905 (2017)
InAs Nanowire GAA n-MOSFETs with 12-15 nm Diameter, T. Vasen, P. Ramvall, A. Afzalian, C. Thelander, K. A. Dick, M. Holland, G. Doornbos, S. W. Wang, R. Oxland, G. Velliantis, M. J. H. van Dal, B. Duriez, J. Rojas-Ramirez, R. Droopad, L. E. Wernersson, L. Samuelson, T. K. Chen, Y. -C. Yeo, M. Passlack, 2016 IEEE SYMPOSIUM ON VLSI TECHNOLOGY
In0.53Ga0.47As(001)-(2×4) and Si0.5Ge0.5(110)surface passivation by self-limiting deposition of silicon containing control layers, M. Edmonds, T. J. Kent, S. Wolf, K. Sardashti, M. Chang, J. Kachian, R. Droopad, E. Chagarov, and A. C. Kummel, 2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)
A Nonlinear Circuit Simulation of Switching Process in Resonant Tunneling Diodes, W.-D. Zhang, E. R. Brown, T. A. Growden, P. R. Burger, R. Droopad, IEEE Trans. on Elect. Device, 63 (2016)4993
Integration of BiFeO3/La0.7Sr0.3MnO3 heterostructures with III-V semiconductors for low-power non-volatile memory and multiferroic field effect transistors, Rahman, Md Shafiqur, Ghose, Susmita, Hong, Liang, Dhungana, Pradip, Fahami, Abbas, Gatabi, Javad R., Rojas-Ramirez, Juan S., Zakhidov, Alex, Klie, Robert F., Pandey, R. K., Droopad, Ravi, J. Mat. Chem. 4 (2016) 10386
Temperature Dependent Border Trap Response Produced by a Defective Interfacial Oxide Layer in Al2O3/InGaAs Gate Stacks, Tang, Kechao, Meng, Andrew C., Droopad, Ravi, McIntyre, Paul C., ACS Appl. Mat. & Interface 8 (2016) 30601
Performance evaluation of broken gap Esaki tunnel diodes on Si and GaSb substrates, P. M. Thomas, M. J. Filmer ; A. Gaur ; S. L. Rommel ; K. Bhatnagar (DST) ; R. Droopad, Electronic Letts. 52 (2016) 73
InAs FinFETs With H-fin=20 nm Fabricated Using a Top-Down Etch Process, R. Oxland , X. Li ; S. W. Chang ; S. W. Wang ; T. Vasen ; P. Ramvall ; R. Contreras-Guerrero ; J. Rojas-Ramirez ; M. Holland ; G. Doornbos ; Y. S. Chang ; D. S. Macintyre ; S. Thoms ; R. Droopad ; Y. -C. Yeo ; C. H. Diaz ; I. G. Thayne ; M. Passlack, IEEE Elect. Dev. Letts. 37 (2016) 261
Determination of the depletion layer width and effects on the formation of double-2DEG in AlGaAs/GaAs heterostructures, Irving Eduardo Cortes-Mestizo, Leticia Ithsmel Espinosa-Vega, Jose Angel Espinoza-Figueroa, Alejandro Cisneros-de-la-Rosa, Eric Eugenio-Lopez, Victor Hugo Mendez-Garcia, Edgar Briones, Joel Briones, Luis Zamora-Peredo, Ravindranath Droopad and Cristo Yee-Rendon, J. Vac. Sci. Tech. B34 (2016) 02L110-1
Structural and optical properties of beta-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy, S. Ghose, M.S. Rahman, J. S. Rojas-Ramirez, M. Caro, R. Droopad, A. Arias, N. Nedev, J. Vac. Sci. Tech. B34 (2016) 02L109-1
Study of InAlAs/InGaAs self-switching diodes for energy harvesting applications, Irving Eduardo Cortes-Mestizo, Edgar Briones, Joel Briones, Ravindranath Droopad, Manuel Perez-Caro, Stefan McMurtry, Michel Hehn, François Montaigne, and Victor Hugo Mendez-Garcia, Japanese Journal of Applied Physics 55, 014304 (2016)
Terahertz harvesting with shape-optimized InAlAs/InGaAs self-switching nanodiodes, Irving Cortes-Mestizo, Victor H. Méndez-García, Joel Briones, Manuel Perez-Caro, Ravi Droopad, Stefan McMurtry, Michel Hehn, François Montaigne, and Edgar Briones, AIP Advances 5, 117238 (2015)
The influence of surface preparation on low temperature HfO2 ALD on InGaAs (001) and (110) surfaces, Tyler Kent, Kechao Tang, Varistha Chobpattana, Muhammad Adi Negara, Mary Edmonds, William Mitchell, Bhagawan Sahu, Rohit Galatage, Ravi Droopad, Paul McIntyre, and Andrew C. Kummel, J. of Chem. Phys. 143, 164711 (2015).
Integration of broken-gap heterojunction InAs/GaSb Esaki tunnel diodes on silicon, Kunal Bhatnagar, Manuel P. Caro, Juan S. Rojas-Ramirez, Ravi Droopad, Paul M. Thomas, Abhinav Gaur, Matthew J. Filmer, and Sean L. Rommel, J.Vac. Sci. & Technol. B 33, 062203 (2015)
Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs, Qiao Qiao, Yuyang Zhang, Rocio Contreras-Guerrero, Ravi Droopad, Sokrates T. Pantelides, Stephen J. Pennycook, Serdar Ogut, and Robert F. Klie, Appl. Phys. Letts. 107, 201604 (2015)
Border trap reduction in Al2O3/InGaAs gate stacks, Kechao Tang, Roy Winter, Liangliang Zhang, Ravi Droopad, Moshe Eizenberg, and Paul C. McIntyre, Appl. Phys. Letts. 107, 202102 (2015)
Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time, Tyler A. Growden, E. R. Brown, Weidong Zhang, Ravi Droopad, and Paul R. Berger, Appl. Phys. Letts. 107, 153506 (2015)
Field-Effect Mobility of InAs Surface Channel nMOSFET With Low D-it Scaled Gate-Stack, S.W. Wang, T. Vasen, G. Doornbos, R. Oxland, S. W. Chang, X. Li, R. Contreras-Guerrero, M. Holland, C. H. Wang, M. Edirisooriya, J. S. Rojas-Ramirez, P. Ramvall, S. Thoms, D.S. Macintyre, G. Vellianitis, G.C.H. Hsieh, Y.S. Chang, K.M. Yin, Y.C. Yeo, C.H. Diaz, R. Droopad, I.G. Thayne, M. Passlack, IEEE Trans. Electron. Devices, 62 (1015) 2429
Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP Substrates, P. Thomas, M. Filmer, A. Gaur, D.J. Pawlik, B. Romanczyk, E. Marini, S.L. Rommel, K. Majumdar, W.Y. Loh, M.H. Wong, C. Hobbs, K. Bhatnagar, R. Contreras-Guerrero, R. Droopad, IEEE Trans. Electron. Devices, 62 (2015) 2450
Passivation of InGaAs(001)-(2 x 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer, M. Edmonds, T. Kent, E. Chagarov, K. Sardashti, R. Droopad, M. Chang, J. Kachian, J.H. Park, A. Kummel, J. Am. Chem. Soc. 137 (2015) 8526
Dual Passivation of Intrinsic Defects at the Compound Semiconductor/Oxide Interface Using an Oxidant and a Reductant, T. Kent, E. Chagarov, M. Edmonds, R. Droopad, A.C. Kummel, ACS Nano 9 (2015) 4843-4849
Fabrication and characterization of sub-micron In0.53Ga0.47As p-i-n diodes, A. Gaur, M. Filmer, P. Thomas, K. Bhatnagar, R. Droopad, S. Rommel, Solid State Electronics, 111 (2015) 234-237
Functional materials integrated on III–V semiconductors, Javad Gatabi, Kevin Lyon, Shafiqur Rahman, Manuel Caro, Juan Rojas-Ramirez, Joelson Cott-Garcia, Ravi Droopad, Byounghak Lee, Microelectronic Engineering 147 (2015) 117–121
Electrical and Optical Properties of LiNbO3/CaCu3Ti4O12 heterostructures on Si, Javad R. Gatabi, Kevin A. Lyon, Shafiqur Rahman, Hanu Arava, Juan S Rojas-Ramirez, R. K. Pandey, Ravi Droopad, to be published in MRS proceedings, 2015
In-situ monitoring during MBE growth of InAs based heterostructures, Kunal Bhatnagar, Juan Rojas-Ramirez, Manuel Caro, Rocio Contreras, Bernd Henninger, Ravi Droopad, Journal of Crystal Growth. Volume 425, (2015) 16–20
AlxIn1−xAsySb1−y alloys lattice matched to InAs(1 0 0) grown by molecular beam epitaxy, J.S. Rojas-Ramirez, S. Wang, R. Contreras-Guerrero, M. Caro, K. Bhatnagar, M. Holland, R. Oxland, G. Doornbos, M. Passlack, C.H. Diaz, R. Droopad, Journal of Crystal Growth, Volume 425, (2015),33–38
Heterointegration of III– V on silicon using a crystalline oxide buffer layer, K. Bhatnagar, J.S. Rojas-Ramirez, R. Contreras-Guerrero, M. Caro, R. Droopad, Journal of Crystal Growth Volume 425, (2015), 262–267
Raman scattering study of LO phonon-plasmon coupled modes in p-type InGaAs, Cusco, R , Domenech-Amador, Nuria Hung, P. Y. Loh, Wei-Yip Droopad, R. Artus, Luis J. Alloys and Compounds, 634, (2015) 87
Surface treatments to reduce leakage current in In0.53Ga0.47As p-i-n diodes, Gaur, Abhinav; Manwaring, Ian; Filmer, Matthew J.); Thomas, Paul M.; Rommel, Sean L.; Bhatnagar, Kunal; Droopad, Ravi, J. Vac. Sci Tech B33 (2015) 021210
Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)(2)S surface treatments, U. Peralagu, I. M. Povey, P. Carolan, J. Lin, R. Contreras-Guerrero, R. Droopad, P. K. Hurley, I. G. Thayne, Appl. Phys. Lett. 105 (2014) 162907
Lifting the off-state bandgap limit in InAs channel metal-oxide-semiconductor heterostructures of nanometer dimensions, Matthias Passlack, Shih-Wei Wang, Gerben Doornbos, Chien-Hsun Wang, Rocio Contreras-Guerrero, Madhavie Edirisooriya, Juan Rojas-Ramirez, Chih-Hua Hsieh, Ravi Droopad, and Carlos H. Diaz, Appl. Phys. Letts. 104, 223501 (2014)
Mapping Defect Density in MBE Grown In0.53Ga0.47As Epitaxial Layers on Si Substrate Using Esaki Diode Valley Characteristics, Kausik Majumdar, Paul Thomas, Wei-Yip Loh, Pui-Yee Hung, Ken Matthews, David Pawlik, Brian Romanczyk, Matthew Filmer, Abhinav Gaur, Ravi Droopad, Sean L. Rommel, Chris Hobbs, and Paul D. Kirsch, IEEE Trans. Electron Devices, 61 (2014) 2049
High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations, C. H. Wang, G. Doornbos, G. Astromskas, G. Vellianitis, R. Oxland, M. C. Holland, M. L. Huang, C. H. Lin, C. H. Hsieh, Y. S. Chang, T. L. Lee, Y. Y. Chen, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, C. H. Diaz, AIP Advances 4, (2014) 047108
Comparative Study of High-k/GaSb Interfaces for Use in Antimonide Based MOSFETs, K. K. Bhuwalka, S.W. Wang, O.C. Noriega, M.C. Holland, R. Contreras-Guerrero, M. Edirisooriya, G. Doornbos, C.-H. Wang, T. H. Myers, R. Droopad, M. Passlack, C.H. Diaz, IEEE Electron Device Letters 35 (2014) 21
Dual passivation of GaAs (110) surfaces using O-2/H2O and trimethylaluminum, Kent, TJ (Kent, Tyler J.); Edmonds, M (Edmonds, Mary); Chagarov, E (Chagarov, Evgueni); Droopad, R (Droopad, Ravi ; Kummel, AC (Kummel, Andrew C.), J. of Chemical Physics, Vol. 139 (2013) 244706
InAs hole inversion and bandgap interface state density of 2×1011 cm-2eV-1 at HfO2/InAs interfaces, C. H. Wang,1, S. W. Wang, G. Doornbos, G. Astromskas, K. Bhuwalka, R. Contreras-Guerrero, M. Edirisooriya, J. S. Rojas-Ramirez, G. Vellianitis, R. Oxland, M. C. Holland, C. H. Hsieh, P. Ramvall, E. Lind, W. C. Hsu, L.-E. Wernersson, R. Droopad, M. Passlack, and C. H. Diaz, Appl. Phys Letts 103, (2013) 143510
Properties of epitaxial BaTiO3 deposited on GaAs, R. Contreras-Guerrero, J. P. Veazey, J. Levy, R. Droopad, Appl Phys Letts. 102 (2013) 012907
Interface properties of MBE grown epitaxial oxides on GaAs, R. Contreras-Guerrero, M. Edirisooriya, O.C. Noriega, R. Droopad, Journal of Crystal Growth, Journal of Crystal Growth 378 (2013) 238–242
Growth of heterostructures on InAs for high mobility device applications, R. Contreras-Guerrero, S. Wang, M. Edirisooriya, W. Priyantha, J.S. Rojas-Ramirez, K. Bhuwalka, G. Doornbos, M. Holland, R. Oxland, G. Vellianitis, M. Van Dal, B. Duriez, M. Passlack, C.H. Diaz, R. Droopad Journal of Crystal Growth, , Journal of Crystal Growth 378 (2013) 117–120
Characterization of anti-phase boundaries in hetero-epitaxial polar-on-nonpolar semiconductor films by optical second-harmonic generation, Ming Lei, J. Price, Wei-E Wang, Man Hoi Wong, Ravi Droopad, Paul Kirsch, G. Bersuker, and M. C. Downer, Appl Phys Letts. 102 (2013) 152103
Magnetic and structural properties of BiFeO3 thin films grown epitaxially on SrTiO3/Si substrates, Ryan P. Laughlin, Daniel A. Currie, Rocio Contreras-Guererro, Aruna Dedigama, Weerasinghe Priyantha, Ravindranath Droopad, Nikoleta Theodoropoulou, Peng Gao, Xiaoqing Pan, J. Appl. Phys. 113, 17D919 (2013)
Epitaxial ferroelectric oxides on semiconductors- A route towards negative capacitance devices, R. Droopad, R. Contreras-Guerrero, J.P. Veazey, Q. Qiao, R.F. Klie, J. Levy, Microelectronic Engineering, 109, (2013) 290-293
MOVPE-grownInAs/AlAs0.16Sb0.84/InAs and InAs/AlAs0.16Sb0.84/GaSb heterostructures, P.Ramvall, C.H.Wang, G.Astromskas, G.Vellianitis, M.Holland, R.Droopad, L. Samuelson, L.E.Wernersson, M.Passlack, C.H.Diaz, ,Journal of Crystal Growth 374 (2013) 43–48
An ultra-low resistance, ultra-shallow, metallic source-drain contact scheme for III-V NMOS, R. Oxland, S.W. Chang, Xu Li, S.W. Wang, G. Radhakrishnan, W. Priyantha, M.J.H. van Dal, C.H. Hsieh, G. Vellianitis, G. Doornbos, K. Bhuwalka, B. Duriez, I. Thayne, R. Droopad, M. Passlack, C.H. Diaz, Y.C. Sun, IEEE Electron Device Letts Volume: 33 Issue: 4 Pages: 501-503
Structure of V thin films on Al(100) using XPD, LEED, and LEIS, Priyantha, W. Droopad, R.; Kopczyk, M.; Smith, R.J.; Kayani, A., Surface Science 606 (2012) 1160–1166
Scanning probe microscopy imaging before and after atomic layer oxide deposition on a compound semiconductor surface , W. Melitz, J.B. Clemens, J. Shen, E.A. Chagarov, S. Lee, J.S. Lee, J.E. Royer, M. Holland, S. Bentley, D. McIntyre, I. Thayne, R. Droopad, A.C. Kummel , Solid State Phenomena, 187 , pgs 9-10 ( 2012)
Challenges of III-V materials in advanced CMOS logic, Kirsch, P.D. Hill, R.J.W.; Huang, J.;Loh, W.Y.; Kim, T.-W.; Wong, M.H.; Min, B.G.; Huffman, C.; Veksler, D.; Young, C.D.;Ang, K.W.; Ali, I.; Lee, R.T.P.; Ngai, T.; Wang, A.; Wang, W.-E.; Cunningham, T.H.;Chen, Y.T.; Hung, P.Y.; Bersch, E.; Sassman, B.; Cruz, M.; Trammell, S.; Droopad, R.; Oktybrysky, S.; Lee, J.C.; Bersuker, G.; Hobbs, C.; Jammy, R., Proceedings of the 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), p 2 pp., 2012
Atomic imaging of atomic layer deposition oxide nucleation with trimethylaluminum on As-rich InGaAs(001) 2 × 4 vs In-rich InGaAs(001) 4 × 2, Melitz, Wilhelm; Kent, Tyler; Kummel, Andrew C.; Droopad, Ravi; Holland, Martin; Thayne, Iain; Journal of Chemical Physics, Vol. 136, no. 15, ( 2012)
Integration challenges of III-V materials in advanced CMOS logic, Hill, R.J.W.; Huang, J.; Loh, W.Y.; Kim, T.; Wong, M.H.; Veksler, D.; Cunningham, T.H.; Droopad, R.; Oh, J.; Hobbs, C.; Kirsch, P.D.; Jammy, R., ECS Transactions, v 45, n 6, p 179-184, 2012, Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
InGaAs surface preparation for atomic layer deposition by hydrogen cleaning and improvement with high temperature anneal , Melitz Wilhelm; Shen Jian; Kent Tyler; Andrew C. Kummel, Ravi Droopad, Journal of Applied Physics, v 110, n 1, July 1, 2011
In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy, W. Priyantha, G. Radhakrishnan, R. Droopad, M. Passlack, M. Journal of Crystal Growth, v 323, n 1, p 103-106, May 15, 2011
Scanning tunneling microscopy study of the interfacial bonding structures of Ga(2)O and In(2)O/In(0.53)Ga(0.47)As(001) , Jian Shen, Darby Feldwinn, Wilhelm Melitz, Ravi Droopad, Andrew C. Kummel, Microelectronic Engineering, v 88, n 4, p 377-382, April 2011
Atomic imaging of atomic H cleaning of InGaAs and InP for ALD, Wilhelm Melitz, Jian Shen, Tyler Kent, Ravi Droopad, Paul Hurley, Andrew C. Kummel, ECS Transactions, v 35, n 4, p 175-189, 2011, Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 11
Atomic-layer-deposited LaAlO3/SrTiO3 all oxide field-effect transistors, L. Dong, Y.Q Liu, M. Xu, Y.Q Wu, R. Colby, E.A Stach, R. Droopad, R. G.Gordon, P.D Ye, 2010 IEDM – TECHNICAL DIGEST Book Series: International Electron Devices Meeting Published: 2010
Interfacial atomic bonding structure of oxides on InAs (001) – (4×2) surface, Shen Jian, Melitz, Wilhelm, Lee, Sangyeob, Feldwinn, Darby L., Droopad, Ravi, Kummel, Andrew C., Journal of the Electrochemical Society, v157, (2010) p H1148-H1152
Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition, Clemens, J.B.; Chagarov, E.A.; Holland, M.; Droopad, R.; Shen, J.; Kummel, A.C., Journal of Chemical Physics, 133, (2010), p 154704
Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As (001- (4×2) surfaces, Jian Shen, Evgueni A. Chagarov, Darby L. Feldwinn, Wilhelm Melitz, Nancy M. Santagata, Andrew C. Kummel, Ravi Droopad, and Matthias Passlack, J. Chem. Phys. 133, (2010) 164704
Bonding Geometries at the In2O and SiO/III-V Semiconductor Interface, Jian Shen, Wilhelm Melitz, Darby L. Feldwinn, Sangyeob Lee, Ravi Droopad and Andrew C. Kummel, ECS Transactions, 33 (3) 105-116 (2010)
Reversible and irreversible reactions of three oxygen precursors on InAs(0 0 1)-(4×2)/c(8×2) Jonathon B. Clemens, Ravi Droopad, Andrew C. Kummel, Surface Science 604 (2010) 1859–1868
Suitability Study of Oxide/Gallium Arsenide Interfaces for MOSFET Applications, Matthias Passlack, Ravi Droopad, and Guy Brammertz, IEEE Trans. on Electron Devices Vol. 57 (2010) 2944-2956
Structural and electronic properties of group III Rich In0.53Ga0.47As(001), Jian Shen, Jonathon B. Clemens, Evgueni A. Chagarov, Darby L. Feldwinn, Wilhelm Melitz, Tao Song, Sarah R. Bishop, Andrew C. Kummel, Ravi Droopad, Surface Science 604 (2010) 1757–1766
Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces, Wilhelm Melitz, Jian Shen, Sangyeob Lee, Joon Sung Lee, Andrew C. Kummel, Ravi Droopad, and Edward T. Yu, J. Appl. Phys, 108 (2010) 023711
Initiation of a passivated interface between hafnium oxide and In(Ga)As(0 0 1)-(4 × 2), J. B. Clemens, S. R. Bishop, J. S. Lee, A. C. Kummel, and R. Droopad, Journal of Chemical Physics, 132 (2010) 244701-9.
Anomalous hybridization in the In-rich InAs(0 0 1) reconstruction, D. L. Feldwinn, J. B. Clemens, J. Shen, S. R. Bishop, T. J. Grassman, A. C. Kummel, R. Droopad, and M. Passlack, Surface Science, 603 (22) 3321–3328 (2009).
Review of Current Status of III-V MOSFETs, I.G. Thayne, R.J.W. Hill, M.C. Holland, X. Li, H.Zhou, D.S. Macintyre, S. Thoms, K. Kalna, C.R. Stanley, A. Asenov, R.Droopad, M. Passlack, ECS Transactions, 19 (5) 275-286 (2009)
Initial stages of the autocatalytic oxidation of the InAs(001)-(4 x 2)/c(8 x 2) surface by molecular oxygen, J. B. Clemens, S. R. Bishop, D. L. Feldwinn, R. Droopad, and A. C. Kummel Source: Surface Science, 603 (14) 2230–2239 (2009)
Electrical Properties of Ga2O3/GaAs Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs,M. Passlack, R. Droopad, P. Fejes, L. Q. Wang, IEEE Electron Device Letts. Vol. 30 (2009) 2-4
Electrical Properties of Ga2O3/GaAs Interfaces and GdGaO Dielectrics in GaAs-Based MOSFETs, M. Passlack, R. Droopad, P. Feyes, L. Wang, IEEE Electron Device Letts, 30 (2009) 2-4.
III-V MOSFETs for future CMOS applications, Passlack, R. Droopad, I. Thayne, A. Asenov, Solid State Technology December 2008
Screening of Oxide/GaAs Interfaces for MOSFET Applications, M. Passlack, R. Droopad, Z. Yu, N. Medendorp, D. Braddock, X. W. Wang, T. P. Ma, T. Buyuklimanli, IEEE Electron Device Letts, 29 (2008) 1181-1183.
Characteristics of thin lanthanum lutetium oxide high-k dielectrics, Dina H. Triyoso, David C. Gilmer, Jack Jiang, Ravi Droopad, Microelectronic Engineering 85 (2008) 1732–1735
Enhancement-Mode GaAs MOSFETs With an In0.3Ga0.7As Channel, a Mobility of Over 5000 cm2/V s, and Transconductance of Over 475 μS/μm, Richard J. W. Hill, David A. J. Moran, Xu Li, Haiping Zhou, Douglas Macintyre, Stephen Thoms, Asen Asenov, Peter Zurcher, Karthik Rajagopalan, Jonathan Abrokwah, Ravi Droopad, Matthias Passlack, Iain G. Thayne, IEEE Electron. Dev. Lett., vol. 28 (2007) 1080-1082.
Electronic properties of adsorbates on GaAs(001)-c(2×8)/(2×4),Darby L. Winn, Michael J. Hale, Tyler J. Grassman, Jonathan Z. Sexton, Andrew C. Kummel, Matthias Passlack and Ravi Droopad, J. Chem. Phys. 127 (2007) 134705
1-μm Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm, K. Rajagopalan, R. Droopad, J. Abrokwah, P. Zurcher, P. Fejes and M. Passlack, IEEE Electron. Dev. Lett., vol. 22 (2007) 100-102, 2007
Monte Carlo Simulations of High-Performance Implant Free In0.3Ga0.7As Nano-MOSFETs for Low-Power CMOS Applications, K. Kalna, J. Wilson, D. Moran, R. Hill. A. Long, R. Droopad, M. Passlack, I. Thayne, A. Asenov, IEEE Trans. Nanotechnology Vol.6 No.1 (2007) 106-112
Enhancement mode high mobility n-MOSFET on gallium arsenide substrate, K. Rajagopalan, J. Abrokwah, R. Droopad, and M. Passlack, phys. stat. sol. (c) 4 (2007) 1671– 1674
Development of GaAs-based MOSFET using molecular beam epitaxy, Ravi Droopad, Karthik Rajagopalan, Jon Abrokwah, Liz Adams, Nate England, Dave Uebelhoer, Peter Fejes, Peter Zurcher, Matthias Passlack, Journal of Crystal Growth 301–302 (2007) 139–144
Direct and indirect causes of Fermi level pinning at the SiO∕GaAs interface, Darby L. Winn / Michael J. Hale / Tyler J. Grassman / Andrew C. Kummel / Ravi Droopad / Matthias Passlack, The Journal of Chemical Physics, 126 (2007) 84703
180nm metal gate, high-k dielectric,implant-free III–V MOSFETs with transconductance of over 425 μS/μm, R.J.W. Hill, D.A.J. Moran, X. Li, H. Zhou, D. Macintyre, S. Thoms, R. Droopad, M. Passlack and I.G. Thayne, Electronics Letts, 43 (2007) 543-545
Compound semiconductor MOSFETs, R. Droopad, K. Rajagopalan, J. Abrokwah, P. Zurcher, M. Passlack, Microelectronic Engineering 84 (2007) 2138–2141
Gate dielectrics on compound semiconductors by molecular beam epitaxy, R. Droopad, K. Rajagopalan, J. Abrokwah, , M. Passlack, J. Vac. Sci Technol. B24 (2006) 1479-1482
In0.75Ga0.25As channel layers with record mobility exceeding 12,000 cm2/Vs for use in high-k dielectric NMOSFETs, R. Droopad, K. Rajagopalan, J. Abrokwah, M. Canonico , M. Passlack, Solid State Electronics, 50 (2006) 1175
Electron energy barriers at interfaces of GaAs(001) with LaAlO3 and Gd2O3, V. V. Afanasev, A. Stesmans, R, Droopad, M. Passlack, L. F. Edge, D. G. Schlom, Appl. Phys. Lett. 89 (2006) 092103
Implant-Free high-Mobility Flatband MOSFET: Principles of Operation, M. Passlack, K. Rajagopalan, J. Abrokwah, R. Droopad, IEEE Trans. Elect. Dev. 53 (2006) 2454
Enhancement-Mode GaAs n-Channel MOSFET, K. Rajagopalan, J. Abrokwah, R. Droopad, M. Passlack, IEEE Electron. Dev. Lett., vol. 27, no. 12, pp. 959-962, 2006
High mobility III-V MOSFET technology, Passlack, M.; Droopad, R.; Rajagopalan, K.; Abrokwah, J.; Zurcher, P.; Fejes, P., 2006 IEEE Compound Semiconductor Integrated Circuit Symposium (IEEE Cat. No.06CH37760) p.4 pp. 2006
Gallium oxide (Ga2 O3) on gallium arsenide-A low defect, high-K system for future devices, Paterson, G.W. / Wilson, J.A. / Moran, D. / Hill, R. / Long, A.R. / Thayne, I. / Passlack, M. / Droopad, R., Materials Science & Engineering B, 135 (2006) 277-81
Gate dielectrics on compound semiconductors, R. Droopad, M. Passlack, N. England, K. Rajagopalan, J. Abrokwah, A. Kummel, Microelectronic Engineering, 80 (2005), 138-145
Chemically resolved scanning tunneling microscopy imaging of Al on p-type AlGaAs(001) c(2×8)∕(2×4), M. J. Hale, D. L. Winn, T. J. Grassman, A. C. Kummel, R. Droopad, The Journal of Chemical Physics, Mar 2005
High Mobility NMOSFET Structure with High-k Dielectric, M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, R. Gregory, D. Nguyen, IEEE Electron. Dev. Lett., vol. 26, no. 10, pp. 713-715, 2005.
Epitaxial Pb(Zr,Ti)O/sub 3/ capacitors on Si by liquid delivery metalorganic chemical vapor deposition, Yang, S.Y., Liu, B.T., Ouyang, J., Nagarajan, V., Kulkarni, V.N., Ramesh, R., Kidder, J., Droopad, R., Eisenbeiser, K., Journal of Electroceramics vol.14, no.1 p.37-44 Jan. 2005
X-ray absorption fine-structure determination of interfacial polarization in SrTiO3 thin films grown on Si(001), J C Woicik / F S Aguirre-Tostada / A Herrera-Gomez / R Droopad / Z Yu / D Schlom / E Karapetrova / Zschack, P / P Pianetta, Physica Scripta, 2005, no.T115 (2005) 3
Epitaxial BiFeO/sub 3/ thin films on Si, Wang, J.; Zheng, H.; Ma, Z.; Prasertchoung, S.; Wuttig, M.; Droopad, R.; Yu, J.; Eisenbeiser, K.; Ramesh, R. Applied Physics Letters vol.85, no.13 p.2574-6 27 Sept. 2004
Heteroepitaxy of SrTiO/sub 3/ on vicinal Si(001): growth and kinetic effects, Liang, Y.; Wei, Y.; Hu, X.M.; Yu, Z.; Droopad, R.; Li, H.; Moore, K., Journal of Applied Physics vol.96, no.6 p.3413-16 15 Sept. 2004
Hetero-epitaxy of perovskite oxides on GaAs(001) by molecular beam epitaxy, Liang, Y.; Kulik, J.; Eschrich, T.C.; Droopad, R.; Yu, Z.; Maniar, P., Applied Physics Letters vol.85, no.7 p.1217-19 16 Aug. 2004
Displacive phase transition in SrTiO/sub 3/ thin films grown on Si(001), Aguirre-Tostado, F.S.; Herrera-Gomez, A.; Woicik, J.C.; Droopad, R.; Yu, Z.; Schlom, D.G.; Karapetrova, J.; Zschack, P.; Pianetta, P., Journal of Vacuum Science & Technology A (Vacuum, Surfaces, and Films) vol.22, no.4 p.1356-60 July 2004
High-performance carbon nanotube transistors on SrTiO/sub 3//Si substrates, Kim, B.M.; Brintlinger, T.; Cobas, E.; Fuhrer, M.S.; Haimei Zheng; Yu, Z.; Droopad, R.; Ramdani, J.; Eisenbeiser, K., Applied Physics Letters vol.84, no.11 p.1946-8 15 March 2004
Colossal magnetoresistive manganite-based ferroelectric field-effect transistor on Si, Zhao, T.; Ogale, S.B.; Shinde, S.R.; Ramesh, R.; Droopad, R.; Yu, J.; Eisenbeiser, K.; Misewich, J., Applied Physics Letters vol.84, no.5 p.750-2 2 Feb. 2004
Elastic anomaly for SrTiO3 thin films grown on Si(001), F. S. Aguirre-Tostado, A. Herrera-Gómez, J. C. Woicik, R. Droopad, Z. Yu, D. G. Schlom, P. Zschack, E. Karapetrova, P. Pianetta, and C. S. Hellberg, PHYSICAL REVIEW B 70, 201403(R) (2004)
Development of integrated heterostructures on silicon by MBE, Droopad, R., Zhiyi Yu, Hao Li, Yong Liang, Overgaard, C., Demkov, A., Xiaodong Zhang, Moore, K., Eisenbeiser, K., Hu, M., Curless, J., Finder, J., Journal of Crystal Growth vol.251, (2003) 638-44
Crystalline Oxide-based Devices on Silicon Substrate, K. Eisenbeiser, R. Droopad, Z. Yu, C. Overgaard, J. Kulik, J. Finder, S. M. Smith, S. Voight, D. Penunuri, J. Electronic Materials, Vol 32 (2003) 868-871
Growth and physical properties of Ga/sub 2/O/sub 3/ thin films on GaAs(001) substrate by molecular-beam epitaxy, Yu, Z., Overgaard, C.D., Droopad, R., Passlack, M., Abrokwah, J.K., Applied Physics Letters 82, (2003) 2978-80
Two-dimensional growth of high-quality strontium titanate thin films on Si, Li, H.; Hu, X.; Wei, Y.; Yu, Z.; Zhang, X.; Droopad, R.; Demkov, A.A.; Edwards, J.; Moore, K.; Ooms, W.; Kulik, J.; Fejes, P., Journal of Applied Physics vol.93, no.8 p.4521-5 15 April 2003
Thermally induced oxide crystallinity and interface destruction in Ga/sub 2/O/sub 3/-GaAs structures, Passlack, M.; Abrokwah, J.K.; Yu, Z.; Droopad, R.; Overgaard, C.; Kawayoshi, H., Applied Physics Letters vol.82, no.11 p.1691-3 17 March 2003
The interface of epitaxial SrTiO/sub 3/ on silicon: in situ and ex situ studies, Xiaoming Hu; Li, H.; Liang, Y.; Wei, Y.; Yu, Z.; Marshall, D.; Edwards, J.; Droopad, R.; Zhang, X.; Demkov, A.A.; Moore, K.; Kulik, J., Applied Physics Letters vol.82, no.2 p.203-5 13 Jan. 2003
GaAs on silicon Using an Oxide Buffer Layer, R. Droopad, J. Curless, Z. Yu, D. Jordan, Y. Liang, C. Overgaard, H. Li, T. Eschrich, J. Ramdani, L. hilt, B. Craigo, K. Eisenbeiser, J. Kulik, P. Feyes, J. Finder, X. Hu, Y. Wei, J. Edwards, K. Moore, M. O’Steen, O. Baklenov, Inst. Phys. Conf, Ser. No 174 p. 1-8 (2003)
Progress in epitaxial oxides on semiconductors, Yu, Z.; Liang, Y.; Hi, H.; Curless, J.; Overgaard, C.; Droopad, R.; Wei, Y.; Hu, X.; Craigo, B.; Finder, J.; Eisenbeiser, K.; Talin, A.; Smith, S.; Voight, S.; Wang, J.; Marshall, D.; Jordan, D.; Edwards, J., Jr.; Moore, K.; , Crystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics. Symposium (Mater. Res. Soc. Symposium Proceedings Vol.747) p.31-42 2003
Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films, Yi Wei, Xiaoming Hu, Yong Liang, Jordan, D.C., Craigo, B., Droopad, R., Yu, Z., Demkov, A., Edwards, J.L., Jr., Ooms, W.J., Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures) 20, (2002)1402-5
Si(100) surface cleaning using Sr and SrO, Yi Wei, Xiaoming Hu, Yong Liang, Jordan, D.C., Craigo, B., Droopad, R., Yu, Z., Demkov, A., Edwards, J.L., Jr., Moore, K., Ooms, W.J., Silicon Materials – Processing, Characterization and Reliability Symposium (Mater. Res. Soc. Proceedings Vol. 716) (2002)139-44
Sr/Si template formation for the epitaxial growth of SrTiO/sub 3/ on silicon, Xiaoming Hu, Liang, Y., Yi Wei, Edwards, J.L., Jr., Droopad, R., Moore, K., Ooms, W.J.,Silicon Materials – Processing, Characterization and Reliability Symposium (Mater. Res. Soc. Proceedings Vol. 716) (2002) 261-6
Development of integrated heterostructures on silicon by MBE, Droopad, R., Curless, J.A., Yu, Z., Jordan, D.C., Liang, Y., Overgaard, C.D., Li, H., Eschrich, T., Craigo, B., Eisenbeiser, K.W., Finder, J., Hu, X., Wei, Y., Edwards, J., Ramdani, J., Tisinger, L., Demkov, A., Moore, K., Marshall, D., Ooms, W.J., Prendergast, J, J. Crys. Growth Vol 251 (2003) 638-644
Development of integrated heterostructures on silicon by MBE, Droopad, R., Curless, J.A., Yu, Z., Jordan, D.C., Liang, Y., Overgaard, C.D., Li, H., Eschrich, T., Craigo, B., Eisenbeiser, K.W., Finder, J., Hu, X., Wei, Y., Edwards, J., Ramdani, J., Tisinger, L., Demkov, A., Moore, K., Marshall, D., Ooms, W.J., Prendergast, J, 2002 International Conference on Molecular Beam Epitaxy (Cat. No.02EX607) p.45-6 2002
Realizing intrinsic piezoresponse in epitaxial submicron lead zirconate titanate capacitors on Si, Nagarajan, V., Stanishevsky, A., Chen, L., Zhao, T., Liu, B.-T., Melngailis, J., Roytburd, A.L., Ramesh, R., Finder, J., Yu, Z., Droopad, R., Eisenbeiser, K., Applied Physics Letters 81, (2002)4215-17
New research yields epitaxially grown GaAs on Si, Eisenbeiser, K., Droopad, R., Finder, J., Solid State Technology 45, (2002) 61-2, 64, 67
Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor, Passlack, M., Abrokwah, J.K., Droopad, R., Zhiyi Yu, Overgaard, C., Sang In Yi, Hale, M., Sexton, J., Kummel, A.C., IEEE Electron Device Letters 23, (2002) 508-10
Materials and physical properties of novel high-k and medium-k gate dielectrics, Liu, R., Zollner, S., Fejes, P., Gregory, R., Lu, S., Reid, K., Gilmer, D., Nguyen, B.-Y., Yu, Z., Droopad, R., Curless, J., Demkov, A., Finder, J., Eisenbeiser, K., Gate Stack and Silicide Issues in Silicon Processing II. Symposium (Materials Research Society Symposium Proceedings Vol.670) (2002) 1-12
GaAs-based heterostructures on silicon, Yu, Z., Droopad, R., Jordan, D., Curless, J., Liang, Y., Overgaard, C., Li, H., Talin, A., Eschrich, T., Craigo, B., Eisenbeiser, K., Emrick, R., Finder, J., Hu, X., Wei, Y., Edwards, J., Jr., Convey, D., Moore, K., Marshall, D., Ramdani, J., Tisinger, L., 2002 GaAs MANTECH Conference. Digest of Papers p.276-9 2002
Direct observation of atomic disordering at the SrTiO/sub 3//Si interface due to oxygen diffusion, Shutthanandan, V., Thevuthasan, S., Liang, Y., Adams, E.M., Yu, Z., Droopad, R., Applied Physics Letters 80, (2002) 1803-5
GaAs MESFETs fabricated on Si substrates using a SrTiO/sub 3/ buffer layer, Eisenbeiser, K., Emrick, R., Droopad, R., Yu, Z., Finder, J., Rockwell, S., Holmes, J., Overgaard, C., Ooms, W., IEEE Electron Device Letters 23, (2002) 300-2
Passivation of defects at the SrTiO/sub 3//Si interface with H and H/sub 2/, Browne, R.J., Ogryzlo, E.A., Eisenbeiser, K., Yu, Z., Droopad, R., Overgaard, C., Applied Physics Letters 80, (2002) 2699-700
Study of microstructure in SrTiO/sub 3//Si by high-resolution transmission electron microscopy, Yang, G.Y., Finder, J.M., Wang, J., Wang, Z.L., Yu, Z., Ramdani, J., Droopad, R., Eisenbeiser, K.W., Ramesh, R., Journal of Materials Research 17, (2002) 204-13
Epitaxial ferroelectric Pb(Zr, Ti)O/sub 3/ thin films on Si using SrTiO/sub 3/ template layers, Wang, Y., Ganpule, C., Liu, B.T., Li, H., Mori, K., Hill, B., Wuttig, M., Ramesh, R., Finder, J., Yu, Z., Droopad, R., Eisenbeiser, K., Applied Physics Letters 80, (2002) 97-9
Materials and physical properties of novel high-k and medium-k gate dielectrics, Liu, R.; Zollner, S.; Fejes, P.; Gregory, R.; Lu, S.; Reid, K.; Gilmer, D.; Nguyen, B.-Y.; Yu, Z.; Droopad, R.; Curless, J.; Demkov, A.; Finder, J.; Eisenbeiser, K.; Campbell, S.A.; Clevengr, L.A.; Griffin, P.B.; Hobbs, C.C., Gate Stack and Silicide Issues in Silicon Processing II. Symposium (Materials Research Society Symposium Proceedings Vol.670) p.K1.1.1-12 2002
Photoemission from the Sr/Si(001) interface, Herrera-Gómez, A.; Aguirre-Tostado, F. S.; Sun, Y.; Pianetta, P.; Yu, Z.; Marshall, D.; Droopad, R.; Spicer, W. E. , Journal of Applied Physics, Volume 90, Issue 12, pp. 6070-6072 (2001).
Band offset and structure of SrTiO3 /Si(001) heterojunctions, Chambers, S. A.; Liang, Y.; Yu, Z.; Droopad, R.; Ramdani, J., Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 19, Issue 3, May 2001, pp.934-939
Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy, R. Droopad, Z. Yu, J. Ramdani, L. Hilt, J. Curless, C. Overgaard, J. L. Edwards, Jr , J. Finder, K. Eisenbeiser and W. Ooms, Materials Science & Engineering B (Solid-State Materials for Advanced Technology) vol.B87, no.3 p.292-6 19 Dec. 2001
Comparative study of Sr and Ba adsorption on Si(100), Xiaoming Hu, Z. Yu, J. A. Curless, R. Droopad, K. Eisenbeiser, J. L. Edwards, Jr., W. J. Ooms and D. Sarid, Applied Surface Science vol.181, no.1-2 p.103-10 3 Sept. 2001
Epitaxial oxides on silicon by molecular beam epitaxy, Ravi Droopad, Zhiyi Yu, Jamal Ramdani, Lyndee Hilt, Jay Curless, Corey Overgaard, John L. Edwards, Jeff Finder, Kurt Eisenbeiser, Jun Wang, V. Kaushik, B-Y Ngyuen and Bill Ooms, J. Crystal Growth, 227-228 (2001) 936-943
Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions, Chambers, S. A.; Liang, Y.; Yu, Z.; Droopad, R.; Ramdani, J.; Eisenbeiser, K., Applied Physics Letters, Volume 77, Issue 11, September 11, 2000, pp.1662-1664
Optical properties of bulk and thin-film SrTiO3 on Si and Pt, Zollner, Stefan; Demkov, A. A.; Liu, R.; Fejes, P. L.; Gregory, R. B.; Alluri, Prasad; Curless, J. A.; Yu, Z.; Ramdani, J.; Droopad, R.; Tiwald, T. E.; Hilfiker, J. N.; Woollam, J. A. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 18, Issue 4, July 2000, pp.2242-2254
Epitaxial oxide thin films on Si(001), Yu, Z.; Ramdani, J.; Curless, J. A.; Overgaard, C. D.; Finder, J. M.; Droopad, R.; Eisenbeiser, K. W.; Hallmark, J. A.; Ooms, W. J.; Kaushik, V. S. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 18, Issue 4, July 2000, pp.2139-2145
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy, Yu, Z.; Ramdani, J.; Curless, J. A.; Finder, J. M.; Overgaard, C. D.; Droopad, R.; Eisenbeiser, K. W.; Hallmark, J. A.; Ooms, W. J.; Conner, J. R.; Kaushik, V. S. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 18, Issue 3, May 2000, pp.1653-1657
Field effect transistors with SrTiO3 gate dielectric on Si, Eisenbeiser, K.; Finder, J. M.; Yu, Z.; Ramdani, J.; Curless, J. A.; Hallmark, J. A.; Droopad, R.; Ooms, W. J.; Salem, L.; Bradshaw, S.; Overgaard, C. D. Applied Physics Letters, Volume 76, Issue 10, March 6, 2000, pp.1324-1326
The (3*2) phase of Ba adsorption on Si(001)-2*1, Hu, X.; Yao, X.; Peterson, C.A.; Sarid, D.; Yu, Z.; Wang, J.; Marshall, D.S.; Droopad, R.; Hallmark, J.A.; Ooms, W.J., Surface Science vol.445, no.2-3 p.256-66 20 Jan. 2000
Optical properties of thin-film SrTiO/sub 3/ on Si grown by MBE, Zollner, S.; Demkov, A.A.; Liu, R.; Curless, J.A.; Yu, Z.; Ramdani, J.; Droopad, R., Recent Developments in Oxide and Metal Epitaxy – Theory and Experiment. Symposium (Materials Research Society Symposium Proceedings Vol.619) p.167-71 2000
Epitaxial oxide films on silicon: growth, modeling and device properties, Droopad, R.; Wang, J.; Eisenbeiser, K.; Yu, Z.; Ramdani, J.; Curless, J.A.; Overgaard, C.D.; Finder, J.M.; Hallmark, J.A.; Kaushik, V.; Nguyen, B.Y.; Marshall, D.S.; Ooms, W.J., Recent Developments in Oxide and Metal Epitaxy – Theory and Experiment. Symposium (Materials Research Society Symposium Proceedings Vol.619) p.155-65 2000
Interface characterization of high-quality SrTiO/sub 3/ thin films on Si(100) substrates grown by molecular beam epitaxy, Ramdani, J.; Droopad, R.; Yu, Z.; Curless, J.A.; Overgaard, C.D.; Finder, J.; Eisenbeiser, K.; Hallmark, J.A.; Ooms, W.J.; Kaushik, V.; Alluri, P.; Pietambaram, S., Applied Surface Science vol.159-160 p.127-33 June 2000
Barium adsorption on Si(100)-(2*1) at room temperature: a bi-polar scanning tunneling microscopy study, Hu, X.; Yao, X.; Peterson, C.A.; Sarid, D.; Yu, Z.; Wang, J.; Marshall, D.S.; Curless, J.A.; Ramdani, J.; Droopad, R.; Hallmark, J.A.; Ooms, W.J., Surface Science vol.457, no.1-2 p.L391-6 1 June 2000
Initial stages of Ba adsorption on the Si(100)-(2×1) surface at room temperature, Yao, X.; Hu, Xiaoming; Sarid, D.; Yu, Z.; Wang, J.; Marshall, D. S.; Droopad, R.; Abrokwah, J. K.; Hallmark, J. A.; Ooms, W. J. Physical Review B (Condensed Matter and Materials Physics), Volume 59, Issue 7, February 15, 1999, pp.5115-5119
Interface charge and nonradiative carrier recombination in Ga2O3-GaAs interface structures, Passlack, M.; Yu, Z.; Droopad, R.; Bowers, B.; Overgaard, C.; Abrokwah, J.; Kummel, A. C. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 17, Issue 1, January 1999, pp.49-52
Metamorphic InAlAs/InGaAs enhancement mode HEMTs on GaAs substrates, Eisenbeiser, K.; Droopad, R.; Jenn-Hwa Huang, IEEE Electron Device Letters vol.20, no.10 p.507-9 Oct. 1999
Phases of Ba adsorption on Si(100)-(2*1) studied by LEED and AES, Xiaoming Hu; Peterson, C.A.; Sarid, D.; Yu, Z.; Wang, J.; Marshall, D.S.; Droopad, R.; Hallmark, J.A.; Ooms, W.J., Surface Science vol.426, no.1 p.69-74 3 May 1999
Properties of epitaxial SrTiO/sub 3/ thin films grown on silicon by molecular beam epitaxy, Yu, Z.; Droopad, R.; Ramdani, J.; Curless, J.A.; Overgaard, C.D.; Finder, J.M.; Eisenbeiser, K.W.; Wang, J.; Hallmark, J.A.; Ooms, W.J.; Huff, H.R.; Richter, C.A.; Green, M.L.; Lucovsky, G.; Hattori, T., Ultrathin SiO/sub 2/ and High-K Materials for ULSI Gate Dielectrics. Symposium p.427-33 1999
Epitaxial BaTiO/sub 3/ films on silicon for MFSFFT applications, Hallmark, J.; Zhiyi Yu; Droopad, R.; Ramdani, J.; Curless, J.; Overgaard, C.; Finder, J.; Marshall, D.; Jun Wang; Ooms, B., Integrated Ferroelectrics vol.27, no.1-4 p.41-50 1999
Nonradiative recombination at GaAs homointerfaces fabricated using an As cap deposition/removal process, Passlack, M.; Droopad, R.; Yu, Z.; Overgaard, C.; Bowers, B.; Abrokwah, J. Applied Physics Letters, Volume 72, Issue 24, June 15, 1998, pp.3163-3165
Electronic properties of MBE grown GaAs homointerfaces fabricated using the As cap deposition/removal technique, Passlack, M.; Droopad, R.; Yu, Z.; Overgaard, C.; Bowers, B.; Abrokwah, J.; Melloch, M.; Reed, M.A., Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors p.131-4 1998
Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications, Huang, J.H.; Glass, E.; Abrokwah, J.; Bernhardt, B.; Majerus, M.; Spears, E.; Parsey, J.M., Jr.; Scheitlin, D.; Droopad, R.; Mills, L.A.; Hawthorne, K.; Blaugh, J., GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 (Cat. No.97CH36098) p.55-8 1997
A true enhancement mode single supply power HFET for portable applications, Glass, E.; Huang, J.-H.; Abrokwah, J.; Bernhardt, B.; Majerus, M.; Spears, E.; Droopad, R.; Ooms, B.; Koepf, G.A., 1997 IEEE MTT-S International Microwave Symposium Digest (Cat. No.97CH36037) p.1399-402 vol.3 1997
A vertical-cavity surface-emitting laser appliqued to a 0.8- mu m NMOS driver, Mathine, D.L.; Droopad, R.; Maracas, G.N., IEEE Photonics Technology Letters vol.9, no.7 p.869-71 July 1997
Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity, Moneger, S.; Qiang, H.; Pollak, F.H.; Mathine, D.L.; Droopad, R.; Maracas, G.N., Solid-State Electronics vol.39, no.6 p.871-4 June 1996
Reduction of the thermal impedance of vertical-cavity surface-emitting lasers after integration with copper substrates, Mathine, D. L.; Nejad, H.; Allee, D. R.; Droopad, R.; Maracas, G. N. Applied Physics Letters, Volume 69, Issue 4, July 22, 1996, pp.463-464
Ellipsometry for III-V epitaxial growth diagnostics, Maracas, G. N.; Kuo, C. H.; Anand, S.; Droopad, R.; Sohie, G. R. L.; Levola, T. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 13, Issue 3, May 1995, pp.727-732
Integration of a single vertical-cavity surface emitting laser onto a CMOS inverter chip, Daryanani, S.; Fathollahnejad, H.; Mathine, D. L.; Droopad, R.; Kubes, A.; Maracas, G. N. Electronics Letters (ISSN 0013-5194), vol. 31, no. 10, p. 833-834
Measurement of AlxGa1 – xAs temperature dependent optical constants by spectroscopic ellipsometry, Kuo, C. H.; Anand, S.; Fathollahnejad, H.; Ramamurti, R.; Droopad, R.; Maracas, G. N. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 13, Issue 2, March 1995, pp.681-684
Temperature-dependent pseudodielectric functions of GaAs determined by spectroscopic ellipsometry, Maracas, G. N.; Kuo, C. H.; Anand, S.; Droopad, R. Journal of Applied Physics (ISSN 0021-8979), vol. 77, no. 4, p. 1701-1704
The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry, Fathollahnejad, H.; Daryanani, S.; Mathine, D.L.; Chuang, C.P.; Droopad, R.; Maracas, G.N., Proceedings. IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.95CH35735) p.373-81 1995
Real time monitoring of III-V alloy composition and real time control of quantum well thickness in MBE by multi-wavelength ellipsometry, Chau-Hong Kuo; Anand, S.; Droopad, R.; Mathine, D.L.; Maracas, G.N.; Johs, B.; He, P.; Woollam, J.A.; Levola, T.; Goronkin, H.; Mishra, U., Compound Semiconductors 1994. Proceedings of the Twenty-First International Symposium p.29-34 1995
Low resistance Pd/Ge ohmic contacts to epitaxially lifted-off n-type GaAs film, Fathollahnejad, H.; Rajesh, R.; Liu, J.; Droopad, R.; Maracas, G.N.; Carpenter, R.W., Journal of Electronic Materials vol.24, no.1 p.35-8 Jan. 1995
Lattice-constant dependence of the dynamical effective charge in AlAs and GaAs, Spencer, G. S.; Ho, A. C.; Menéndez, J.; Droopad, R.; Fathollahnejad, H.; Maracas, G. N. Physical Review B (Condensed Matter), Volume 50, Issue 19, November 15, 1994, pp.14125-14130
High-field electron transport in GaAs: a picosecond time-resolved Raman probe, Grann, Erik D.; Sheih, Shou J.; Chia, C.; Tsen, Kong T.; Sankey, Otto F.; Maracas, George N.; Droopad, R.; Salvador, A.; Botcharev, A.; Morkoc, Hadis Proc. SPIE Vol. 2142, p. 190-197, Ultrafast Phenomena in Semiconductors, David K. Ferry; Henry M. van Driel; Eds.
Photoreflectance study of GaAs/GaAlAs digital alloy compositionally graded structures, Qiang, Hao; Pollak, Fred H.; Huang, Y.-S.; Chi, W. S.; Droopad, R.; Mathine, David L.; Maracas, George N. Proc. SPIE Vol. 2139, p. 11-19, Quantum Well and Superlattice Physics V, Gottfried H. Doehler; Emil S. Koteles; Eds.
Characterization of an AlGaAs/GaAs asymmetric triangular quantum well grown by a digital alloy approximation, Mathine, D. L.; Maracas, G. N.; Gerber, D. S.; Droopad, R.; Graham, R. J.; McCartney, M. R. Journal of Applied Physics, Volume 75, Issue 9, May 1, 1994, pp.4551-4556
Measurement of GaAs temperature-dependent optical constants by spectroscopic ellipsometry, Kuo, C. H.; Anand, S.; Droopad, R.; Choi, K. Y.; Maracas, G. N. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 12, Issue 2, March 1994, pp.1214-1216
Determination of molecular beam epitaxial growth parameters by ellipsometry, Droopad, R.; Kuo, C. H.; Anand, S.; Choi, K. Y.; Maracas, G. N. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 12, Issue 2, March 1994, pp.1211-1213
Application of the digital alloy composition grading technique to strained InGaAs/GaAs/AlGaAs diode laser active regions, Cody, Jeffrey G.; Mathine, David L.; Droopad, Ravi; Maracas, George N.; Rajesh, Ramamurti; Carpenter, Ray W. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Volume 12, Issue 2, March 1994, pp.1075-1077
Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors, Grann, E. D.; Sheih, S. J.; Chia, C.; Tsen, K. T.; Sankey, O. F.; Guncer, Selim E.; Ferry, D. K.; Maracas, G.; Droopad, Ravi; Salvador, A.; Botcharev, A.; Morkoç, H. Applied Physics Letters, Volume 64, Issue 10, March 7, 1994, pp.1230-1232
Second-order Raman spectroscopy of AlAs: A test of lattice-dynamical models, Spencer, G. S.; Grant, J.; Gray, R.; Zolman, J.; Menéndez, J.; Droopad, R.; Maracas, G. N. Physical Review B (Condensed Matter), Volume 49, Issue 8, February 15, 1994, pp.5761-5764
Electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/GaAlAs resonant cavity: contactless and contact modes, Moneger, S.; Pollak, F.H.; Mathine, D.L.; Droopad, R.; Maracas, G.N., LEOS ’94. Conference Proceedings. IEEE Lasers and Electro-Optics Society 1994 7th Annual Meeting (Cat. No.94CH3371-2) p.218-19 vol.2 1994
Electrical characterization of highly strained ultrathin InAs/GaAs quantum wells, Yu, F.; Droopad, R.; Maracas, G.N.; Liu, J.; Rajesh, R.; Carpenter, R.W.; Gumbs, G.; Luryi, S.; Weiss, B.; Wicks, G.W., Growth, Processing, and Characterization of Semiconductor Heterostructures. Symposium p.151-6 1994
InGaAs quantum well vertical-cavity surface-emitting lasers integration onto silicon substrates, Mathine, D.L.; Fathollahnejad, H.; Droopad, R.; Daryanani, S.; Maracas, G.N., LEOS ’94. Conference Proceedings. IEEE Lasers and Electro-Optics Society 1994 7th Annual Meeting (Cat. No.94CH3371-2) p.282-3 vol.1 1994
Vertical-cavity surface-emitting lasers integrated onto silicon substrates by PdGe contacts, Fathollahnejad, H.; Mathine, D.L.; Droopad, R.; Maracas, G.N.; Daryanani, S., Electronics Letters vol.30, no.15 p.1235-6 21 July 1994
Comparison of electroabsorption in asymmetric triangular and rectangular GaAs/AlxGa1 – xAs multiple quantum wells, Gerber, D. S.; Droopad, R.; Maracas, G. N. Applied Physics Letters, Volume 62, Issue 5, February 1, 1993, pp.525-527
In-situ spectroscopic ellipsometry in molecular beam epitaxy, Maracas, George N.; Edwards, John L.; Shiralagi, K.; Choi, K. Y.; Droopad, R.; Johs, Blaine; Woollam, John A. In Nebraska Univ., Materials, Structures, and Devices for High-Speed Electronics 1 p
Real-time analysis of in-situ spectroscopic ellipsometric data during MBE growth of III-V semiconductors, Johs, Blaine; Edwards, John L.; Shiralagi, K. T.; Droopad, R.; Choi, K. Y.; Maracas, George N.; Meyer, Duane; Cooney, Gerald T.; Woollam, John A. In Nebraska Univ., Materials, Structures, and Devices for High-Speed Electronics 1 p
A GaAs/AlGaAs Asymmetric Fabry-Perot Reflection Modulator with Very High Contrast Ratio, D. S. Gerber, R. Droopad, G. N. Maracas, Photonics Technology Letts. 5 (1993) 55-58.
Pseudomorphic InGaAs/GaAs and GaAs/AlGaAs asymmetric triangular quantum wells grown by MBE for optoelectronic device applications, Droopad, R.; Gerber, D.S.; Choi, C.; Maracas, G.N., Journal of Crystal Growth vol.127, no.1-4 p.606-10 Feb. 1993
In situ spectroscopic ellipsometry in molecular beam epitaxy, Maracas, G. N.; Edwards, J. L.; Shiralagi, K.; Choi, K. Y.; Droopad, R.; Johs, B.; Woolam, J. A. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 10, Issue 4, July 1992, pp.1832-1839
Enhancement of mobility in pseudomorphic FET’s with up and down monolayers, Goronkin, Herb; Shen, Jun; Tehrani, Saied; Droopad, Ravindranath; Maracas, George N.; Legge, Ron N.; Zhu, X. T. Japanese Journal of Applied Physics, Part 1 (ISSN 0021-4922), vol. 31, no. 7, July 1992, p. 2071-2074.
Quantum well thickness effect on the deep-shallow duality of Si in AlGaAs/InGaAs heterostructures, Shen, J.; Tehrani, S.; Goronkin, H.; Droopad, R.; Maracas, G. Journal of Applied Physics, Volume 71, Issue 12, June 15, 1992, pp.5985-5988
Low temperature GaAs grown by gas source molecular beam epitaxy, Droopad, R.; Shiralagi, K. T.; Puechner, R. A.; Choi, K. Y.; Maracas, G. N. Chemical beam epitaxy and related growth techniques 1991; Proceedings of the 3rd International Conference /ICCBE-3/, Oxford, England, Sept. 1-5, 1991. A92-40901 16-76) Journal of Crystal Growth (ISSN 0022-0248), vol. 120, no. 1-4, May 1992, p. 200-205.
Electron mobility enhancement by confining optical phonons in GaAs/AlAs multiple quantum wells, Theodore Zhu, X.; Goronkin, Herbert; Maracas, George N.; Droopad, Ravi; Stroscio, Michael A. Applied Physics Letters, Volume 60, Issue 17, April 27, 1992, pp.2141-2143
Hydride cracker nozzle design for gas source molecular beam epitaxy, Shiralagi, K. T.; Choi, K. Y.; Droopad, R.; Maracas, G. N.; Quinn, W. E. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Volume 10, Issue 1, January 1992, pp.46-50
Nonlinear Electroabsorption in Asymmetric Triangular Quantum Well Self-Electro Effect Devices, Puechner, R. A.; Gerber, D. S.; Droopad, R.; Maracas, G. N. Journal of Nonlinear Optical Physics and Materials, Volume 1, Issue 03, pp. 473-491 (1992).
A Novel Optically Bistable Multiple Quantum Well Phase Modulator, Chongdae Park, Kumar T. Shiralagi, Ravi Droopad, George N. Maracas, Photonics Technology Letts, Vol. 4, 1225-1227, 1992.
In-situ and ex-situ characterization of GaAs/AlAs quantum well structures using spectroscopic ellipsometry, Edwards, J.L.; Maracas, G.N.; Shiralagi, K.T.; Choi, K.Y.; Droopad, R., Journal of Crystal Growth vol.120, no.1-4 p.78-83 May 1992
Molecular beam epitaxial growth and optical properties of strained rectangular and asymmetric triangular InGaAs quantum well structures, Droopad, R.; Puechner, R. A.; Choi, K. Y.; Shiralagi, K. T.; Maracas, G. N. Journal of Crystal Growth (ISSN 0022-0248), vol. 114, no. 3, Nov. 1991, p. 327-336.
Local Vibrational Mode Spectroscopy of Si donors and Be Acceptors in MBE InAs and InSb Studied by Infrared Absorption and Raman Scattering, R. Adinall, R. Murray, R. C. Newman, J. Wagner, S. D. Parker, R. L. Williams, R. Droopad, A. G. DeOliveira, I. Ferguson, R. A. Stradling, Semicond. Sci. & Tech. 6 (1991) 147-154.
Optical Properties of a Single Strained InGaAs/GaAs Quantum Well Grown on Vicinal GaAs Surfaces, R. Droopad, R. A. Puechner, K. T. Shiralagi, K. Y. Choi, G. N. Maracas, “, Appl. Phys. Lett. 58(16) (1991) 1771-1779.
Electrical and Optical Characterization of Gas Source and Solid Source MBE Low Temperature Buffers, R. A. Puechner, D. A. Johnson, K. T. Shiralagi, D. S. Gerber, R. Droopad, G. N. Maracas, J. Crystal Growth 111 (1991) 43-49.
Optical Properties of Quantum Wells Grown Upon Gas Source Molecular Beam Epitaxy Low Temperature Buffers, K. T. Shiralagi, R. A. Puechner, K. Y. Choi, R. Droopad, G. N. Maracas, J. Appl. Phys. 69 (1991) 7942-7944.
Optical Properties of Strained Asymmetric Triangular InGaAs/GaAs Multiple Quantum Wells, R. Droopad, K. Y. Choi, R. A. Puechner, K. T. Shiralagi, D. S. Gerber, G. N. Maracas, Appl. Phys. Lett. 59 (1991) 2308-2310.
Molecular Beam Epitaxial Growth and Optical Properties of Strained Rectangular and Asymmetric Triangular InGaAs Quantum Well Structures, R. Droopad, R. A. Puechner, K. Y. Choi, K. T. Shiralagi, G. N. Maracas, J. Crystal Growth. 114 (1991) 327-336.
Enhancement of mobility in pseudomorphic FETs with up and down monolayers, Goronkin, H.; Tehrani, S.; Droopad, R.; Maracas, G.N.; Shen, J.; Legge, R.N.; Zhu, X.T., IEEE Transactions on Electron Devices vol.38, no.12 p.2703 Dec. 1991
Real-time analysis of in-situ spectroscopic ellipsometric data during MBE growth of III-V semiconductors, Johs, B.; Edwards, J.L.; Shiralagi, K.T.; Droopad, R.; Choi, K.Y.; Maracas, G.N.; Meyer, D.; Cooney, G.T.; Woollam, J.A.; Kuech, T.F.; Dapkus, P.D.; Aoyagi, Y., Atomic Layer Growth and Processing Symposium p.75-80 1991
Narrow photoluminescence linewidth of quantum wells grown by gas source molecular beam epitaxy, Shiralagi, K.T.; Puechner, R.A.; Choi, K.Y.; Droopad, R.; Maracas, G.N., Journal of Crystal Growth vol.114, no.3 p.337-45 Nov. 1991
Optical Properties of Asymmetric Triangular Quantum Wells for Self Electro-optic Effect Devices, R. A. Puechner, D. S. Gerber, D. A. Johnson, R. Droopad, G. N. Maracas, Proc. IEEE Nonlinear Optics: Materials, Phenomena and Devices, Hawaii, (1990) Technical Digest pg 115
Protective Overlayer Techniques for Preparation of InSb(001) Surfaces, S. D. Evans, L. L. Cao, R. G. Egdell, R. Droopad, S. D. Parker, R. A. Stradling, Surf. Sci. 226 (1990) 169-179
A TEM and RHEED Study of the Initial Stages of Heteroepitaxial Growth of InSb on GaAs, X. Zhang, A. E. Staton-Bevan, D. W. Pashley, S. D. Parker, R. Droopad, R. L. Williams, R. C. Newman, J. Appl. Physics. 67(2) (1990) 800-806.
Nipi Superlattices in InSb: An Alternative Approach to 10µm Detector Fabrication, C. C. Phillips, C. Hodge, R. Thomas, S. D. Parker, R. L. Williams, R. Droopad, Proc. Int. Conf. on Narrow Gap Semiconductors and Related Materials (Maryland), Semicond. Sci. Tech. 5 (1990) S319-S322
MBE Growth and Quantum Transport Measurement of Spike Doped InSb and InAs, R. L. Williams, E. Skuras, R. A. Stradling, R. Droopad,S. N. Holmes, S. D. Parker, Proc. Int. Conf. on Narrow Gap Semiconductors and Related Materials (Maryland), Semicond. Sci. & Tech. 5 (1990) S338 -S341.
Atomic Ordering and Alloy Clustering in MBE Grown InAsSb Epilayers , T. Y. Seong, A. G. Norman, G. R. Booker, R. Droopad, R. L. Williams,S. D. Parker, P. D. Wang R. A. Stradling, Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures, Materials Research Society Symposium Proceedings Vol 163 (1990) 900, Eds. D. J. Wolford, J. Bernhols
A Generalised Model for the Reconstruction of {001} Surfaces of III-V Compound Semiconductors Based on a RHEED Study of InSb(001), A. d’Oliveira, S. D. Parker, R. Droopad, B. A. Joyce, Surf. Sci. 227 (1990) 150-156.
Far Infrared Magneto-optical Studies of Free and Bound Carriers in High Purity MBE InAs, P. D. Wang, S. N. Holmes, R. A. Stradling, R. Droopad, I. Ferguson, A. d’Oliveira, S. D. Parker, R. L. Williams, Mat. Sci. Forum Vol 65-66 (1990) 381-388
RHEED Intensity Oscillations observed during MBE Growth of InSb(001), R. Droopad, R. L. Williams, S. D. Parker, Semicond. Sci. & Tech. 4 (1989) 111-113
Magneto-optical and Transport Studies of Ultrahigh Mobility Films of InAs Grown by Molecular Beam Epitaxy on GaAs, S. N. Holmes, R. A. Stradling, P. D. Wang, R. Droopad, S. D. Parker, R. L. Williams, Semicond. Sci. & Tech. 4 (1989) 303-308.
Observation and Control of the Amphoteric Behaviour of Si-Doped InSb Grown on GaAs by MBE, S. D. Parker, R. L. Williams, R. Droopad, R. A. Stradling, K. W. J. Barnham, S. N. Holmes, J. Laverty, C. C. Phillips, E. Skuras, R. Thomas, X. Zhang, A. Staton-Bevan, D. W. Pashley Semicond. Sci. & Tech. 4 (1989) 663-675
Parallel and Perpendicular Field Magnetotransport Studies of MBE Grown GaAs Doping Superlattices and Slab Doped InSb Formed by Selective Doping with Silicon, R. Droopad, S. D. Parker, E. Skuras, R. L. Williams, R. A. Stradling, R. B. Beall, J. J. Harris, High Magnetic Fields in Semiconductor Physics II (Springer-Verlag) 1989, 199-206
Residual Donor Contamination in MOCVD, MOMBE and MBE GaAs Studied by Far Infrared Spectroscopy, N. Holmes, C. C. Phillips, R. A. Stradling, Z. Wasilewski, R. Droopad, S. D. Parker, W. T. Yuen, P. Balk, A. Brauers, H. Heinecke, C. Plass, M. Weyers, C. T. Foxon, B. A. Joyce, G. W. Smith, C. T. Whitehouse, Semicond. Sci. & Tech. 4 (1989) 782-790